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| MJW21193 (PNP) MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. * Total Harmonic Distortion Characterized * High DC Current Gain - * * hFE = 20 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.25 A, 80 V, 1 Second http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5 V Collector Current - Continuous Collector Current - Peak (Note 1) Base Current - Continuous Total Power Dissipation @ TC = 25C Derate Above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5.0 400 16 30 5.0 200 1.43 -65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/C C 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS 1 2 3 TO-247 CASE 340K STYLE 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol RJC RJA Max 0.7 40 Unit C/W C/W MJW 2119x LLYWW 1 BASE 3 EMITTER 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. 2 COLLECTOR MJW2119x = Device Code x = 3 or 4 LL = Location Code Y = Year WW = Work Week ORDERING INFORMATION Device MJW21193 MJW21194 Package TO-247 TO-247 Shipping 30 Units/Rail 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2002 1 March, 2002 - Rev. 1 Publication Order Number: MJW21193/D MJW21193 (PNP) MJW21194 (NPN) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non-repetitive) (VCE = 80 Vdc, t = 1 s (non-repetitive) ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) Base-Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) THD hFE unmatched hFE matched fT Cob - - 4 - 0.8 0.08 - - - - - 500 MHz pF % hFE 20 8 VBE(on) VCE(sat) - - - - 1.4 4 - - - - 60 - 2.2 Vdc Vdc IS/b 4.0 2.25 - - - - Adc VCEO(sus) ICEO IEBO ICEX 250 - - - - - - - - 100 100 100 Vdc Adc Adc Adc Symbol Min Typ Max Unit PNP MJW21193 f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 0.1 TJ = 25C ftest = 1 MHz 1.0 IC COLLECTOR CURRENT (AMPS) 10 f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) VCE = 10 V 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0.1 TJ = 25C ftest = 1 MHz NPN MJW21194 10 V 5V VCE = 5 V 1.0 IC COLLECTOR CURRENT (AMPS) 10 Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product http://onsemi.com 2 MJW21193 (PNP) MJW21194 (NPN) TYPICAL CHARACTERISTICS PNP MJW21193 1000 1000 NPN MJW21194 hFE , DC CURRENT GAIN TJ = 100C 100 25C -25C VCE = 20 V 10 0.1 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 hFE , DC CURRENT GAIN TJ = 100C 25C 100 -25C VCE = 20 V 10 0.1 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V PNP MJW21193 1000 1000 NPN MJW21194 hFE , DC CURRENT GAIN TJ = 100C 25C 100 -25C hFE , DC CURRENT GAIN TJ = 100C 25C 100 -25C VCE = 5 V 10 0.1 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 5. DC Current Gain, VCE = 5 V PNP MJW21193 30 I C, COLLECTOR CURRENT (A) I C, COLLECTOR CURRENT (A) 25 20 15 10 5.0 TJ = 25C 0 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 0 0 1.5 A IB = 2 A 1A 0.5 A 35 30 25 20 15 10 5.0 Figure 6. DC Current Gain, VCE = 5 V NPN MJW21194 IB = 2 A 1.5 A 1A 0.5 A TJ = 25C 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 Figure 7. Typical Output Characteristics http://onsemi.com 3 Figure 8. Typical Output Characteristics MJW21193 (PNP) MJW21194 (NPN) TYPICAL CHARACTERISTICS PNP MJW21193 3.0 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 2.5 2.0 1.5 1.0 0.5 0 0.1 VBE(sat) VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 TJ = 25C IC/IB = 10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 VBE(sat) TJ = 25C IC/IB = 10 NPN MJW21194 Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages PNP MJW21193 VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 10 TJ = 25C 10 TJ = 25C NPN MJW21194 VCE = 20 V (SOLID) VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID) VCE = 5 V (DASHED) 1.0 0.1 0.1 1.0 10 100 0.1 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Typical Base-Emitter Voltage Figure 12. Typical Base-Emitter Voltage PNP MJW21193 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100 NPN MJW21194 10 mSec 10 1 Sec 1.0 100 mSec 10 mSec 10 1 Sec 1.0 100 mSec 0.1 1.0 10 100 1000 0.1 1.0 10 100 1000 VCE, COLLECTOR EMITTER (VOLTS) VCE, COLLECTOR EMITTER (VOLTS) Figure 13. Active Region Safe Operating Area Figure 14. Active Region Safe Operating Area http://onsemi.com 4 MJW21193 (PNP) MJW21194 (NPN) There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 150C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10000 TC = 25C C, CAPACITANCE (pF) Cib 10000 TC = 25C C, CAPACITANCE (pF) Cib 1000 Cob f(test) = 1 MHz) 100 0.1 1.0 10 100 1000 Cob 1.0 10 100 100 0.1 f(test) = 1 MHz) VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 15. MJW21193 Typical Capacitance Figure 16. MJW21194 Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) 1.0 0.9 0.8 0.7 0.6 10 100 1000 FREQUENCY (Hz) 10000 100000 Figure 17. Typical Total Harmonic Distortion http://onsemi.com 5 MJW21193 (PNP) MJW21194 (NPN) +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 DUT 0.5 0.5 8.0 DUT -50 V Figure 18. Total Harmonic Distortion Test Circuit http://onsemi.com 6 MJW21193 (PNP) MJW21194 (NPN) PACKAGE DIMENSIONS TO-247 CASE 340K-01 ISSUE C -Q- TBM U A 1 2 3 -T- E -B- L R DIM A B C D E F G H J K L P Q R U V 0.25 (0.010) M C 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217 BSC 0.118 0.134 K P -Y- V F D 0.25 (0.010) M H J G YQ S STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER http://onsemi.com 7 MJW21193 (PNP) MJW21194 (NPN) PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MJW21193/D |
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